Investigation of fluorine-concentration profiles in pulsed-laser-irradiated BF+2 -implanted silicon single crystals
- 15 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (4), 366-368
- https://doi.org/10.1063/1.93529
Abstract
The technique of 19F(p,αγ) 16O resonant nuclear reaction is applied to pulsed‐laser‐irradiated BF+2 ‐implanted silicon single crystals for the determination of fluorine‐concentration profiles by γ‐ray counting. Out‐diffusion of fluorine is observed for all applied laser‐energy densities. For laser‐energy densities typical for complete recrystallization of the damaged surface layer, about 50% of the implanted fluorine is still retained in this layer.Keywords
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