Control of growth orientation for epitaxially grown ZnSe nanowires
- 2 January 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (1), 013108
- https://doi.org/10.1063/1.2161397
Abstract
ZnSe nanowires (NWs) were grown on (111), (100), and (110)-oriented GaAs substrates by molecular-beam epitaxy via the vapor-liquid-solid reaction. The size dependence of NW growth orientation was studied by varying the Au catalyst size. Through detailed transmission electron microscopy studies, it was found that ⟨111⟩ orientation is the growth direction for NWs with size , while NWs with size around prefer to grow along the ⟨110⟩ direction, with a small portion along the ⟨112⟩ direction. These observations have led to the realization of vertical ZnSe NWs with size around grown on a GaAs(110) substrate.
Keywords
This publication has 12 references indexed in Scilit:
- ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxyApplied Physics Letters, 2003
- Preparation and photoluminescence of single-crystal zinc selenide nanowiresChemical Physics Letters, 2003
- Green-light-emitting ZnSe nanowires fabricated via vapor phase growthApplied Physics Letters, 2003
- Growth of nanowire superlattice structures for nanoscale photonics and electronicsNature, 2002
- Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomeratesApplied Physics Letters, 2000
- Control of Thickness and Orientation of Solution-Grown Silicon NanowiresScience, 2000
- General Synthesis of Compound Semiconductor NanowiresAdvanced Materials, 2000
- Si nanowires synthesized by laser ablation of mixed SiC and SiO2 powdersChemical Physics Letters, 1999
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Semiconductor Clusters, Nanocrystals, and Quantum DotsScience, 1996