p-type InP/Langmuir film m.i.s. diodes
- 1 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 127 (3), 137-139
- https://doi.org/10.1049/ip-i-1.1980.0026
Abstract
The paper reports for the first time the m.i.s. characteristics of p-type InP structures preparaed using a low temperature method. With organic films deposited using the langmuir-Blodgett technique, fairly conventional CV data have been obtained for both bulk single crystals and epitaxial layers, showing that at zero bias, the surface is depleted. Conductance peaks have been observed using weak illumination. The paper also contains a discussion of the principal factors influencing the interaface properties, including substrate etching prior to thin-film deposition.Keywords
This publication has 1 reference indexed in Scilit:
- InP/Al2O3n-channel inversion-mode m.i.s.f.e.t.s using sulphur-diffused source and drainElectronics Letters, 1979