p-type InP/Langmuir film m.i.s. diodes

Abstract

The paper reports for the first time the m.i.s. characteristics of p-type InP structures preparaed using a low temperature method. With organic films deposited using the langmuir-Blodgett technique, fairly conventional CV data have been obtained for both bulk single crystals and epitaxial layers, showing that at zero bias, the surface is depleted. Conductance peaks have been observed using weak illumination. The paper also contains a discussion of the principal factors influencing the interaface properties, including substrate etching prior to thin-film deposition.