Deep level spectroscopy in InP:Fe
- 1 January 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (1), 55-56
- https://doi.org/10.1049/el:19810040
Abstract
The characteristics of a single electron trap related to the iron deep level acceptor have been determined for the first time by DLTS techniques in indium phosphide. An activation energy of 0.63 eV and a capture cross-section of 3.5×10−14 cm2 have been measured. The presence of this trap in nominally undoped samples shows that iron can be an important residual impurity in InP.Keywords
This publication has 2 references indexed in Scilit:
- Photoluminescence and Photoconductivity Study of the 1.10 eV Energy Level in Fe-Doped InPPublished by Springer Nature ,1980
- Photoluminescence Studies of Deep Impurity States in Fe-Doped InPPublished by Springer Nature ,1980