A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A), L821
- https://doi.org/10.1143/jjap.24.l821
Abstract
The DX center concentration in Al x Ga1-x As which depends on composition and hydrostatic pressure has been calculated, based on a model wherein the donor level which is associated with the L conduction band forms the DX center. The calculation shows good agreement with the results of observation. The present model can be applied to a similar center observed in GaPAs. The possibility of DX center formation in other III-III'-V and III-V-V' ternary alloy systems has also been pointed out.Keywords
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