A high field triode
- 1 April 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (4), 349-363
- https://doi.org/10.1016/0038-1101(65)90112-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Design theory of a surface field-effect transistorSolid-State Electronics, 1964
- Hot-carrier triodes with thin-film metal baseSolid-State Electronics, 1963
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- Boron Redistribution in Silicon by Thermal OxidationJournal of Applied Physics, 1962
- Thermal Oxidation of SiliconJournal of Applied Physics, 1962
- Some Experiments on, and a Theory of, Surface BreakdownJournal of Applied Physics, 1956
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953