Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon
- 31 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5), 442-444
- https://doi.org/10.1063/1.101869
Abstract
We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3)1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.Keywords
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