The effect of doping on microdefect formation in as-grown dislocation-free Czochralski silicon crystals

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Abstract
The influence of p‐ and n‐type doping on microdefect formation in macroscopically dislocation‐free as‐grown Czochralski silicon crystals has been studied using copper decoration, x‐ray transmission topography, preferential etching, and high‐voltage transmission electron microscopy. B‐doped crystals are found to contain undecorated perfect dislocation loops of an interstitial nature. In Sb‐doped crystals two other types of microdefects are present, one of which consists of a precipitate particle exhibiting a vacancy type of strain field. All defects are distributed in a striated pattern.