Advanced electron mobility model of MOS inversion layer considering 2D-degenerate electron gas physics
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 763-766
- https://doi.org/10.1109/iedm.1990.237049
Abstract
A novel mobility model for electrons in the Si-MOS inversion layer is proposed on the basis of two-dimensional degenerate electron gas physics. The mobility is found to be affected by Pauli's exclusion principle and the Fermi-Dirac distribution function. The universal relation between mobility and effective field strength in the normal direction can be consistently explained by the model, including its temperature dependence.<>Keywords
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