Metal insulator transition due to surface roughness scattering in a quantum well
- 30 November 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (6), 531-534
- https://doi.org/10.1016/0038-1098(86)90733-7
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Conductivity, plasmon, and cyclotron-resonance anomalies in Si(100) metal-oxide-semiconductor systemsPhysical Review B, 1985
- Disordered electronic systemsReviews of Modern Physics, 1985
- Weak localization and coulomb interaction in disordered systemsZeitschrift für Physik B Condensed Matter, 1984
- The metal insulator transition in two-dimensional systems with charged impuritiesSolid State Communications, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980
- An elementary approach towards the Anderson transitionSolid State Communications, 1978
- Quantum Spectroscopy of the Low-Field Oscillations in the Surface ImpedancePhysical Review B, 1968
- Polarizability of a Two-Dimensional Electron GasPhysical Review Letters, 1967