Preparation and Dielectric Properties of the Multilayer Capacitor with (Ba, Sr)TiO3 Thin Layers by Metalorganic Chemical Vapor Deposition

Abstract

Barium strontium titanate ( (Ba, Sr)TiO₃; BST) thin films were prepared on Pt-coated magnesium oxide single-crystal substrates (Pt(111)/MgO(100) and Pt(100)/MgO(100)) at 650° C by metalorganic chemical vapor deposition (MOCVD). The BST films with a perovskite single phase were obtained. Their room-temperature dielectric constant was 400–590 measured at 100 mV and 1 kHz. The leakage current density was below the order of 10^-7 A/cm² at 3 V, and the breakdown field was above 500 kV/cm. In addition, the multilayer capacitor with five layers of BST was prepared. The room-temperature capacitance with an effective electrode area of 0.16 mm² was 20 nF at 100 mV and 1 kHz. The leakage current was on the order of 10^-8 A at 1V, and on order of 10^-5 A at 3 V.