A brief description of the dc and rf diode sputtering unit is first presented. The study of properties of the films is reviewed taking into consideration two main parameters, oxygen partial pressure and substrate temperature. Reflection electron diffraction and x-ray diffraction studies show that the films on amorphous fused quartz substrates are highly oriented. Neutron activation analysis is used to determine the impurities in films (Cu, Ag, Br, Na, Au, Fe, In). Two ranges of resistivity were observed depending on the sputtering atmosphere. The temperature dependence of resistivity for high and low resistivity ZnO films is presented as well as impedance behavior vs frequency and optical transmittance for films annealed or not. ESR investigation of films (resistivity ∼109 Ω⋅cm, thickness 0–5 μ) shows a signal at g = 2.00. Finally, a tentative explanation of defects is presented.