Isolated Interstitials in Silicon. II

Abstract

An isolated interstitial in silicon at the bond-centered position is investigated using the theory of solid-state scattering and a pseudopotential for the defect potential. The present study is an extension of the work reported recently for the interstitial at the nominal site. One feature is common to the two cases, namely, no bound state is found in the band gap associated with this defect. However, owing to stronger interactions between the atoms at the small distances in this case, the change in the one-electron energy due to the interstitial is larger and the bound state below the valence band lies much deeper.