Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C
- 1 August 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (9), 3637-3638
- https://doi.org/10.1063/1.1708925
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Emissivity at 0.65 Micron of Silicon and Germanium at High TemperaturesJournal of Applied Physics, 1957
- Thermal Radiation from Partially Transparent Reflecting BodiesJournal of the Optical Society of America, 1950