Application of 2-dimensional solutions of the Shockley-Poisson equation to inversion-layer m.o.s.t. devices

Abstract

A model for inversion-layer m.o.s.t.s is outlined which avoids the usual gradual-channel approximation by the use of 2-dimensional solutions to the Shockley-Poisson and Laplace equations governing the field distribution. Computed I/V and C/V characteristics and potential-distribution; diagrams are shown for a particular device geometry.