Crystal Growth of 2H Silicon Carbide
- 1 October 1969
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (11), 4660-4662
- https://doi.org/10.1063/1.1657249
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Mechanism of Branching and Kinking during VLS Crystal GrowthJournal of the Electrochemical Society, 1968
- High Electron Mobility of Cubic SiCJournal of Applied Physics, 1966
- Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite StructurePhysical Review B, 1966
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- Synthesis and crystallography of the wurtzite form of silicon carbideZeitschrift für Kristallographie, 1959