Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating

1 January 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (8), 321-322
https://doi.org/10.1049/el:19850227

Abstract

Threshold current has been reduced to 22–35 mA for 1.54 μm InGaAsP/InP distributed feedback (DFB) lasers with second-order grating, and single-longitudinal-mode operation at an output power of 5 mW has been achieved up to 90°C.

Keywords

THRESHOLD CURRENT
OUTPUT POWER
III-V SEMICONDUCTORS
SEMICONDUCTOR JUNCTION LASERS
SINGLE-LONGITUDINAL-MODE OPERATION
INGAASP/INP DFB LASER
SECOND-ORDER GRATING
1.54 MICRONS WAVELENGTH

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