Hot-carrier Coulomb effects in GaAs investigated by femtosecond spectroscopy around the band edge
- 17 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25), 2713-2715
- https://doi.org/10.1063/1.103808
Abstract
We report the first femtosecond measurements of carrier‐induced changes in the absorption and refractive index of GaAs thin films. Absorption measurements in the vicinity of the band edge indicate instantaneous band‐gap renormalization as well as instantaneous plasma screening of electron‐hole interactions. Band filling and plasma screening appear to be the dominant contributions to the changes of refractive index.Keywords
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