The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass
- 10 September 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (25), 4429-4442
- https://doi.org/10.1088/0022-3719/17/25/007
Abstract
By measuring the photoconductive edge and the magnetophonon effect in InP and GaAs as their band gap is increased by the application of hydrostatic pressure, it has been possible to obtain a direct experimental relationship between the electron effective mass, m*, and the direct band gap, E0. Comparison with the k.p theory showed that in InP, Ep=16.7+or-0.2, Ep'=0 and C=0 while in GaAs Ep=25.0+or-0.5, Ep'=5+or-1 and C=0 where Ep, Ep' and C are measures of the k.p interaction of the conduction band with, respectively, the valence band, with the next ( Gamma 5c) conduction band and with the conduction bands lying even higher.Keywords
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