Spectral Emissivity of Silicon

Abstract

The emissivity of silicon was observed in the spectral region from 0.4 to 15 µ at various temperatures from 340°K to 1070°K by using two n-type specimens with the resistivity of 15 ohm-cm and 7×10^-3 ohm-cm at 300°K, respectively. The thermal radiation of silicon consists of three types due to band-to-band transition, free carriers and lattice vibration. It was made clear from the emissivity measurement that, in a pure specimen, the radiation due to lattice vibration is conspicuous at low temperatures, while that due to free carriers is predominant at higher temperatures, and that, in a doped specimen, the radiation due to free carriers is predominant even at low temperatures. The observed emissivity is close to the theoretical formula represented by the refractive index n and the extinction coefficient k. The temperature dependence of n and k is shown and a brief discussion is also added.