Abstract
The electroreflectance spectra of Ge were studied in detail in the region 1.5 to 6.5 eV. Structures are observed at energies which correspond to critical points in interband transitions. By varying the magnitude of the ac voltage which provides the modulating field at the surface of the sample, and by using different polarizations of the incident light, many overlapping structures have been resolved. Peaks at 2.05 and 2.24 eV are attributed to L3L1 transitions, the valence band being split by 0.19 eV at the L3 point because of the spin-orbit interaction. Structures observed between 2.7 and 3.3 eV are attributed to transitions between the doubly split valence band at Γ25 and the doubly split level at Γ15. The splitting of the Γ15 level is 0.13 eV, as compared to the splitting of 0.29 eV for the Γ25 level. The Γ25Γ15 transitions are found to overlap with the Δ5Δ1 transitions around 3.13 eV. There are two overlapping structures around 4.4 eV, one of which is attributed to the Σ2Σ3 transition; the other could be either a second manifestation of the same Σ2Σ3 transition, or due to the X4X1 transition. Structures observed at 5.85 and 6.18 eV are yet to be identified. Structures observed at 2.12 and 2.32 eV are attributed to the Λ3Λ1 transitions, and those at 5.35 and 5.52 eV to the L3L3 transitions. Transitions at the Δ, X, and Σ points are found to have anisotropic electroreflectance spectra. The line shapes for electroreflectance spectra are in qualitative agreement with those predicted by Aspnes and by Seraphin and Bottka for critical points having M0, M1, and M2 types of singularities, if Lorentzian broadening is included.