Electroreflectance Spectra and Band Structure of Germanium
- 15 January 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 165 (3), 888-897
- https://doi.org/10.1103/PhysRev.165.888
Abstract
The electroreflectance spectra of Ge were studied in detail in the region 1.5 to 6.5 eV. Structures are observed at energies which correspond to critical points in interband transitions. By varying the magnitude of the ac voltage which provides the modulating field at the surface of the sample, and by using different polarizations of the incident light, many overlapping structures have been resolved. Peaks at 2.05 and 2.24 eV are attributed to transitions, the valence band being split by 0.19 eV at the point because of the spin-orbit interaction. Structures observed between 2.7 and 3.3 eV are attributed to transitions between the doubly split valence band at and the doubly split level at . The splitting of the level is 0.13 eV, as compared to the splitting of 0.29 eV for the level. The transitions are found to overlap with the transitions around 3.13 eV. There are two overlapping structures around 4.4 eV, one of which is attributed to the transition; the other could be either a second manifestation of the same transition, or due to the transition. Structures observed at 5.85 and 6.18 eV are yet to be identified. Structures observed at 2.12 and 2.32 eV are attributed to the transitions, and those at 5.35 and 5.52 eV to the transitions. Transitions at the , , and points are found to have anisotropic electroreflectance spectra. The line shapes for electroreflectance spectra are in qualitative agreement with those predicted by Aspnes and by Seraphin and Bottka for critical points having , , and types of singularities, if Lorentzian broadening is included.
Keywords
This publication has 21 references indexed in Scilit:
- Electric Field Effects on the Dielectric Constant of SolidsPhysical Review B, 1967
- Electric-Field Effects on Optical Absorption near Thresholds in SolidsPhysical Review B, 1966
- Band Structure of Silicon from an Adjusted Heine-Abarenkov CalculationPhysical Review B, 1966
- Energy Structure in Photoelectric Emission from Cs-Covered Silicon and GermaniumPhysical Review B, 1966
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- Band Structure of Silicon, Germanium, and Related SemiconductorsPhysical Review B, 1962
- Bonding and Antibonding Spin-Orbit SplittingsPhysical Review Letters, 1962
- Interband Transitions in Groups 4, 3-5, and 2-6 SemiconductorsPhysical Review Letters, 1962
- Calculation of the Energy Band Structures of the Diamond and Germanium Crystals by the Method of Orthogonalized Plane WavesPhysical Review B, 1954
- Electronic Structure of the Germanium CrystalPhysical Review B, 1953