Field emission characteristics of boron-doped diamond films prepared by MPE-CVD
- 1 April 1999
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 142 (1-4), 516-520
- https://doi.org/10.1016/s0169-4332(98)00687-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A Carbon Nanotube Field-Emission Electron SourceScience, 1995
- New buried P+-grid polysilicon emitter bipolar power transistorSolid-State Electronics, 1995
- Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission deviceJournal of Materials Research, 1995
- Similarities in the 'cold' electron emission characteristics of diamond coated molybdenum electrodes and polished bulk graphite surfacesJournal of Physics D: Applied Physics, 1993
- Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond filmsElectronics Letters, 1993
- Diamond cold cathodeIEEE Electron Device Letters, 1991
- Cold field emission from CVD diamond films observed in emission electron microscopyElectronics Letters, 1991
- Performance of silicon cold cathodesJournal of Vacuum Science & Technology B, 1986
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979
- Physical properties of thin-film field emission cathodes with molybdenum conesJournal of Applied Physics, 1976