New buried P+-grid polysilicon emitter bipolar power transistor
- 31 October 1995
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (10), 1854-1856
- https://doi.org/10.1016/0038-1101(95)00091-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequenciesSolid-State Electronics, 1988
- The role of the interfacial layer in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1982
- Emitter current-crowding in high-voltage transistorsIEEE Transactions on Electron Devices, 1978
- Application of a charge-control model to high-voltage power transistorsIEEE Transactions on Electron Devices, 1976
- The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometriesIEEE Transactions on Electron Devices, 1964