Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy
- 12 August 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (7), 943-945
- https://doi.org/10.1063/1.116951
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- E1-gap resonant enhancement of the Raman scattering from highly strained InAs/InP short-period superlatticesSuperlattices and Microstructures, 1994