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Si Bridging Epitaxy from Si Windows onto SiO
2
by
Q
-Switched Ruby Laser Pulse Annealing
Home
Publications
Si Bridging Epitaxy from Si Windows onto SiO
2
by
Q
-Switched Ruby Laser Pulse Annealing
Si Bridging Epitaxy from Si Windows onto SiO
2
by
Q
-Switched Ruby Laser Pulse Annealing
MT
Masao Tamura
Masao Tamura
HT
Hiroshi Tamura
Hiroshi Tamura
TT
Takashi Tokuyama
Takashi Tokuyama
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1 January 1980
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 19
(1)
,
L23-L26
https://doi.org/10.1143/jjap.19.l23
Abstract
No abstract available
Keywords
POWER DENSITY
EPITAXIAL GROWTH
SINGLE CRYSTAL
DISLOCATIONS
Cited by 87 articles