Ferroelectric memories
- 1 April 1990
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 104 (1), 241-256
- https://doi.org/10.1080/00150199008223827
Abstract
A status report is given on the development of thin-film ferroelectric memories, both by sputtering and by sol-gel techniques, integrated onto gallium arsenide or silicon. Emphasis is on lead zirconate titanate (PZT) materials. Progress in ferroelectric materials, electrical characterization, and circuit design is reviewed. Commercial parts recently developed by Ramtron Corp. and Krysalis Corp. are included, in addition to work by our own group.Keywords
This publication has 10 references indexed in Scilit:
- Radiation effects on ferroelectric thin-film memories: Retention failure mechanismsJournal of Applied Physics, 1989
- Raman spectroscopy of submicron KNO3 films. II. Fatigue and space-charge effectsJournal of Applied Physics, 1988
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron BeamsJapanese Journal of Applied Physics, 1985
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974
- Retention in thin ferroelectric filmsFerroelectrics, 1973
- Note on Ferroelectric Domain SwitchingJournal of the Physics Society Japan, 1971
- Domain wall structure in BaTiO3 during switchingCzechoslovak Journal of Physics, 1970
- Effect of ferroelectric polarization on insulated-gate thin-film transistor parametersSolid-State Electronics, 1966
- The Increase in Permittivity of Ferroelectrics as a Consequence of the Polarization Reversal Process. Part II. TheoryJournal of the Physics Society Japan, 1965