Nonlinear distortions and their cancellation in transistors

Abstract

A linear two-port network model of the intrinsic transistor, which accounts for the nonlinear effects at the emitter-base junction, is developed in this paper. From this model nonlinear distortions are calculated and their variations with frequency and operating point are accounted for. With extrinsic parameters incorporated into this model it is shown how third-order distortion cancellation results from their effect. Two-signal injection, which permits the maximum conversion gain for the transistor as a mixer to be developed along with figures of merit for harmonic distortions, cross modulation, and intermodulation, is considered.