Pressure-Induced Electronic Collapse and Semiconductor-to-Metal Transition in EuO
- 18 December 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 29 (25), 1674-1676
- https://doi.org/10.1103/physrevlett.29.1674
Abstract
Pressure-volume data for EuO to 400 kbar are presented. An electronic collapse in the Eu ion involving the promotion of a electron to the state occurs near 300 kbar at room temperature. The structure remains NaCl type in this transformation. The transition appears to be first order and is from semiconductor to the metallic state. The collapsed NaCl phase undergoes a phase change to the CsCl-type structure near 400 kbar.
Keywords
This publication has 10 references indexed in Scilit:
- Direct Optical Observation of the Semiconductor-to-Metal Transition in SmS under PressurePhysical Review B, 1972
- Pressure-Induced Electronic Collapse and Structural Changes in Rare-Earth MonochalcogenidesPhysical Review B, 1972
- Spin-Polarized Energy Bands in Eu Chalcogenides by the Augmented-Plane-Wave MethodPhysical Review B, 1970
- Optical Properties of the Europium ChalcogenidesIBM Journal of Research and Development, 1970
- Pressure dependence of the absorption edge of the Europium-chalcogenidesSolid State Communications, 1969
- X-Ray Diffraction and Optical Observations on Crystalline Solids up to 300 kbarReview of Scientific Instruments, 1967
- Kurzvorträge zum Hauptthema. Hochdruck‐Hochtemperatur‐Umwandlungen der Monotelluride der seltenen ErdenBerichte der Bunsengesellschaft für physikalische Chemie, 1966
- Effect of Pressure on the Curie Temperature and Volume of GdNThe Journal of Chemical Physics, 1966
- Magnetic and Structural Properties of Europium Metal and Europium Monoxide at High PressurePhysical Review B, 1966
- High pressure phase transition of europium tellurideSolid State Communications, 1965