Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlattices
- 1 February 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 46 (2), 172-178
- https://doi.org/10.1016/0022-0248(79)90053-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970