Charge Storage in Junction Diodes
- 1 July 1954
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 25 (7), 916-918
- https://doi.org/10.1063/1.1721769
Abstract
A calculation is made which relates the physical properties of a junction diode to the troublesome spike current arising from hole storage in the germanium. This spike current results when the diode is suddenly switched from the conducting to the nonconducting state. For small germanium pellets, this current decay is exponential with a decay considerably shorter than that indicated by the hole lifetime in the material. For larger pellets the decay is a sum of exponentials giving a considerably longer decay time, still shorter, however, than the hole lifetime.Keywords
This publication has 4 references indexed in Scilit:
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- Impurity Diffusion and Space Charge Layers in "Fused-Impurity"JunctionsPhysical Review B, 1953
- Theory of Alpha for P-N-P Diffused Junction TransistorsProceedings of the IRE, 1952
- Power Rectifiers and TransistorsProceedings of the IRE, 1952