EFFECT OF HEATING UNDER BIAS ON PHOTOELECTRIC THRESHOLD IN MOS STRUCTURE
- 15 March 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (6), 220-222
- https://doi.org/10.1063/1.1651961
Abstract
Experimental evidence of change in photoelectric threshold energy for emission of electrons from silicon into oxide in MOS structure, due to heating under biased conditions is given. A model to explain this behavior has been proposed.Keywords
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- Photoemission of Electrons from Silicon and Gold into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
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