Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics
- 1 August 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 10 (4), 245-247
- https://doi.org/10.1109/jssc.1975.1050600
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Fundamental limitations in microelectronics—I. MOS technologySolid-State Electronics, 1972
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961