Electrical and photoconductive properties of ion implanted amorphous silicon
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 327-332
- https://doi.org/10.1016/0022-3093(80)90615-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Doping of amorphous silicon by alkali-ion implantationsPhilosophical Magazine Part B, 1979
- Interstitial doping of amorphous siliconApplied Physics Letters, 1977
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- The temperature dependence f photoconductivity in a-SiJournal of Non-Crystalline Solids, 1974
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973