Thermal contact resistance measurements were made for 2×2 mm aluminum test sections in contact with a silicon chip in air, argon, and vacuum environments. The contact pressure was varied from 27 to 500 kPa. The solid component of the interface resistance was measured in the vacuum tests and agreed with a published correlation. The gap component agreed with another published correlation. Analysis of the gap resistance suggests that values of the accommodation coefficients estimated from the data agree reasonably well with reported values. The thermal contact resistance data for this work are noteworthy for several reasons. First, the test surfaces were typical of those found in an actual application, i.e., the aluminum was ground and the silicon polished, rather than the idealized bead-blasted surfaces normally reported. Second, the test specimens, and hence the apparent contact areas were much smaller than any previously reported in the open literature. Third, the applied contact pressure ranged to a considerably lower level than any previously reported. Finally, the test data agree with correlations which were not specifically formulated for the test conditions imposed.