The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor depositionJournal of Applied Physics, 1988
- Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation.MRS Proceedings, 1988
- MOCVD growth and characterization of GaP on SiJournal of Crystal Growth, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983