InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
- 1 September 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (9A), L1130
- https://doi.org/10.1143/jjap.36.l1130
Abstract
InGaN multiple quantum well (MQW) laser diodes were fabricated on (0001)Si oriented 6H–SiC substrate using low-pressure metal organic vapor phase epitaxy (LP-MOVPE). The laser oscillation was observed above the threshold current of 800 mA at a peak wavelength of 414.3 nm under pulsed current injection at room-temperature. The pulse duration was 300 ns and the repetition frequency was 1 kHz. The threshold current density and differential efficiency were estimated to be 16 kA/cm2 and 0.03 W/A, respectively. The full width at half maximum (FWHM) of the lasing emission lines was between 0.03 nm and 0.21 nm. Streak-shaped far field patterns were clearly observable. The lifetime of the laser diode was more than 5 hours.Keywords
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