Multiple Twins in Epitaxial Gallium Arsenide
- 1 May 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (6), 2711-2713
- https://doi.org/10.1063/1.1709993
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Tripyramids and associated defects in epitaxial silicon layersPhilosophical Magazine, 1965
- Oriented growth of semiconductors I. Orientations in gallium arsenide grown epitaxially on germaniumPhilosophical Magazine, 1965
- A structural imperfection in vapour-grown siliconPhilosophical Magazine, 1964
- Preparation and Properties of GaAs-GaP, GaAs-Ge, and GaP-Ge HeterojunctionsJournal of the Electrochemical Society, 1964