Schottky contacts on chemically etched p- and n-type indium phosphide

Abstract

The Schottky‐barrier energy φ_B for Al, Ni, Co, Pd, Au, and Ag contacts on chemically etched 〈100〉 surfaces of both p‐ and n‐type InP were measured and the metallurgical behavior of the contact structures were studied using Auger electron spectroscopy. φ_B was found to be a function of the chemical reactivity of the contact metal with the InP substrate. Extensive outdiffusion of In was observed in the Au and Ag contacts. The results indicate that the chemical effects at the metal‐semiconductor interface are a determining factor in the formation of InP Schottky barriers.