The growth and properties of epitaxial layers of zinc sulphide on germanium
- 1 December 1970
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 5 (12), 1054-1060
- https://doi.org/10.1007/bf02403277
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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- Oriented growth of semiconductors I. Orientations in gallium arsenide grown epitaxially on germaniumPhilosophical Magazine, 1965
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- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
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- Thermal Restoration of Oxygenated Germanium SurfacesJournal of Applied Physics, 1958
- Electric Contact to Zinc Sulphide CrystalsProceedings of the Physical Society. Section B, 1957