Carrier lifetime measurement of a junction laser using direct modulation
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (4), 148-151
- https://doi.org/10.1109/jqe.1968.1075053
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Resonance-like characteristics of the direct modulation of a junction laserProceedings of the IEEE, 1967
- 4A3 - Intensity fluctuations in the output of laser oscillatorsIEEE Journal of Quantum Electronics, 1966
- X-band modulation of GaAs lasersProceedings of the IEEE, 1965
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964