Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
Top Cited Papers
- 1 December 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 1-4
- https://doi.org/10.1109/iedm.2008.4796676
Abstract
Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.Keywords
This publication has 5 references indexed in Scilit:
- Fast switching and long retention Fe-O ReRAM and its switching mechanismPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Electroforming and resistance-switching mechanism in a magnetite thin filmApplied Physics Letters, 2007
- Non-volatile resistive switching for advanced memory applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulsesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Ultraviolet annealing of thin films grown by pulsed laser depositionApplied Surface Science, 2000