Neodymium complexes in GaP separated by photoluminescence excitation spectroscopy
- 15 February 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (4), 1202-1204
- https://doi.org/10.1063/1.336558
Abstract
Implantation of neodymium (Nd) in GaP gives rise to a very complex spectrum of intra 4f‐shell luminescence transitions involving a number of Nd defect associates. Using a tunable color center laser, photoluminescence excitation spectroscopy was employed to separate different Nd3+ complexes in GaP:Nd. Two dominant noncubic Nd centers are clearly identified which arise presumably from the association of Nd with radiation damage centers.Keywords
This publication has 6 references indexed in Scilit:
- Ytterbium-doped InP light-emitting diode at 1.0 μmApplied Physics Letters, 1985
- Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAsJournal of Applied Physics, 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescence excitation spectroscopy on InP: YbPhysical Review B, 1984
- Broadly tunable cw lasers using F_2^+ centers for the 126–148 and 082–107 μm bandsOptics Letters, 1978
- The raising of angular momentum degeneracy of f-Electron terms by cubic crystal fieldsJournal of Physics and Chemistry of Solids, 1962