Solid-state reaction bonding of silicon carbide (HIPSiC) below 1000°C
- 15 December 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 220 (1-2), 35-40
- https://doi.org/10.1016/s0921-5093(96)10452-4
Abstract
No abstract availableKeywords
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