Dislocation reactions in arsenic-implanted and annealed silicon
- 16 February 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 33 (2), 793-805
- https://doi.org/10.1002/pssa.2210330240
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The nature and habit planes of defects in P+ ion-implanted siliconPhysica Status Solidi (a), 1974
- Residual disorder in Si from oxygen recoils in annealed ``through-oxide'' arsenic implantsApplied Physics Letters, 1974
- Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantationsApplied Physics Letters, 1973
- On the Nature of the Long‐Range Dislocation Contrast in Electron Transmission MicrographsPhysica Status Solidi (b), 1967
- Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1964
- A dislocation reaction in the face-centred cubic latticeJournal of Computers in Education, 1951