On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (3), 525-541
- https://doi.org/10.1109/16.199358
Abstract
No abstract availableThis publication has 36 references indexed in Scilit:
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