Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells
- 1 March 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (3), 1314-1322
- https://doi.org/10.1063/1.332205
Abstract
A theoretical analysis is given of the induced current profiles at grain boundaries in polycrystalline solar cells, as obtained by light or electron beam excitation. The area A and the variance σ2 of the contrast profile of a grain boundary are calculated for realistic generations as functions of the interface recombination velocity vs and the minority carrier diffusion length L. A graphical new procedure is proposed which allows the simultaneous determination of vs and L from the measured values of A and σ. The evaluation of an experimental electron beam induced current profile illustrates the applicability of the theory.Keywords
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