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Tunnelling through GaAs-AlxGa1−xAs-GaAs double heterojunctions
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Tunnelling through GaAs-AlxGa1−xAs-GaAs double heterojunctions
Tunnelling through GaAs-AlxGa1−xAs-GaAs double heterojunctions
DD
D. Delagebeaudeuf
D. Delagebeaudeuf
PD
P. Delescluse
P. Delescluse
PE
P. Etienne
P. Etienne
JM
J. Massies
J. Massies
ML
M. Laviron
M. Laviron
JC
J. Chaplart
J. Chaplart
TL
T. Linh
T. Linh
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1 January 1982
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 18
(2)
,
85-87
https://doi.org/10.1049/el:19820059
Abstract
GaAs-Al0.5Ga0.5As-GaAs tunnel diodes have been achieved. Tunnel currents have been measured and compared to theoretical calculations based on WKB approximation.
Keywords
GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS
WENTZEL-KRAMER-BRILLOUIN APPROXIMATION
GAAS-AL0.5GA0.5AS-GAAS TUNNEL DIODES
III-V SEMICONDUCTORS
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Cited by 25 articles