Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism
- 30 April 2004
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 48 (4), 567-574
- https://doi.org/10.1016/j.sse.2003.09.025
Abstract
No abstract availableKeywords
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