Current transport in GaAs Schottky barrier diodes subject to high neutron fluence
- 1 February 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2), 1076-1084
- https://doi.org/10.1063/1.327715
Abstract
The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast‐neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current‐voltage (I‐V) characteristics, with one‐carrier space‐charge‐limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I‐V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I‐V data taken over a wide temperature range.Keywords
This publication has 15 references indexed in Scilit:
- Interface state density in Au-nGaAs Schottky diodesSolid-State Electronics, 1977
- Neutron Radiation Effects in Gold and Aluminum GaAs Schottky DiodesIEEE Transactions on Nuclear Science, 1976
- Properties of Gallium Arsenide Double-Injection DevicesJournal of Applied Physics, 1971
- Study of Localized Levels in Semi-Insulators by Combined Measurements of Thermally Activated Ohmic and Space-Charge-Limited ConductionPhysical Review B, 1969
- Space-Charge-Limited Currents in Copper Phthalocyanine Thin FilmsJournal of Applied Physics, 1967
- Space-charge-limited current in siliconSolid-State Electronics, 1967
- Electrical and Optical Properties of Vitreous SeleniumPhysical Review B, 1963
- Space-Charge-Limited Currents in Organic CrystalsJournal of Applied Physics, 1962
- Mechanisms of space-charge-limited current in solidsSolid-State Electronics, 1961
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955