Voltage-controlled DC reactive magnetron sputtering of indium-doped zinc oxide films
- 14 May 1992
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 25 (5), 865-870
- https://doi.org/10.1088/0022-3727/25/5/019
Abstract
Transparent and conducting indium-doped zinc oxide (IZO) films were deposited by DC reactive magnetron sputtering from Zn+2.5 at.% In alloy target. Stabilization of the operating point in the transition region was achieved by means of controlling the cathode voltage. The discharge current and the argon flow were kept constant. The drift of the cathode voltage was compensated for by induced changes in the oxygen flow. Different values of cathode voltage were chosen within the range corresponding to the transition between metallic and reactive modes. It was found that there exists a correlation between the cathode voltage and the film composition. The changes in structural, electrical and optical parameters of IZO films with cathode voltage were also studied.Keywords
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